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參數(shù)資料
| 型號(hào)： | APT15GT60KR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 382K |
| 代理商： | APT15GT60KR |
052-6202
Rev
D
12-2005
APT15GT60KR(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 250A)
Gate Threshold Voltage (V
CE = VGE, I C = 700A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT15GT60KR(G)
600
±30
42
20
45
45A @ 600V
184
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3
4
5
1.6
2.0
2.5
2.8
25
1500
±100
600V
APT15GT60KR
APT15GT60KRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
G
C
E
TO-220
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| APT15GT60KRG | 功能描述:IGBT 600V 42A 184W TO220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15S20BCT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT15S20BCTG | 功能描述:DIODE SCHOTTKY 2X25A 200V TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 二極管，整流器 - 陣列 系列:- 其它有關(guān)文件:STTH10LCD06C View All Specifications 標(biāo)準(zhǔn)包裝:1,000 系列:- 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:2V @ 5A 電流 - 在 Vr 時(shí)反向漏電:1µA @ 600V 電流 - 平均整流 (Io)（每個(gè)二極管）:5A 電壓 - (Vr)（最大）:600V 反向恢復(fù)時(shí)間(trr):50ns 二極管類型:標(biāo)準(zhǔn) 速度:快速恢復(fù) = 200mA（Io） 二極管配置:1 對共陰極 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D²Pak（2 引線+接片），TO-263AB 供應(yīng)商設(shè)備封裝:D2PAK 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1553 (CN2011-ZH PDF) 其它名稱:497-10107-2 |
| APT15S20K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT15S20KCT | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
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