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參數(shù)資料
| 型號(hào)： | APT15GT120SR |
| 廠商： | MICROSEMI CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 36 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 122K |
| 代理商： | APT15GT120SR |
052-6266
Re
v
D
7-2009
APT15GT120BR_SR(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 0.6mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT15GT120BR_SR(G)
1200
±30
36
18
45
45A @ 960V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
G
C
E
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.5
3.0
3.6
3.8
100
TBD
480
The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltage Drop
High Freq. Switching to 50KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
TO
-24
7
G
C
E
D3PAK
G
C
E
(S)
(B)
APT15GT120BR
APT15GT120SR
APT15GT120BR(G)
APT15GT120SR(G)
1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Microsemi Website - http://www.microsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT15GT120BR | 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT15GT60BR | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT15GT60BR | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT15GT60KR | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GT60KRG | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT15GT120SRG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT15GT60BR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60BRD | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60BRDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT15GT60BRDQ1G | 功能描述:IGBT 600V 42A 184W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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