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參數(shù)資料
| 型號： | APT15GT120BRDQ1 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 430K |
| 代理商： | APT15GT120BRDQ1 |
050-6267
Rev
C
12-2005
APT15GT120BRDQ1(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 5
L = 100 H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE = 600V
T
J = 25°C, TJ =125°C
R
G = 5
L = 100 H
14
12
10
8
6
4
2
0
40
35
30
25
20
15
10
5
0
4000
3500
3000
2500
2000
1500
1000
500
0
8000
7000
6000
5000
4000
3000
2000
1000
0
120
100
80
60
40
20
0
45
40
35
30
25
20
15
10
5
0
1000
800
600
400
200
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
GE = 15V
VCE = 800V
VGE = +15V
RG = 5
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 5, L = 100H, VCE = 800V
R
G = 5, L = 100H, VCE = 800V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,30A
E
off,30A
VCE = 800V
VGE = +15V
TJ = 125°C
E
on2,15A
E
off,15A
E
on2,7.5A
E
off,7.5A
E
on2,30A
E
off,30A
E
on2,15A
E
off,15A
E
on2,7.5A
E
off,7.5A
VCE = 800V
VGE = +15V
RG = 5
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 5
T
J = 125°C
T
J = 25°C
相關(guān)PDF資料 |
PDF描述 |
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| APT15GT120BRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT15GT120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT15GT120SR | 36 A, 1200 V, N-CHANNEL IGBT |
| APT15GT120BR | 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT15GT60BR | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT15GT120BRDQ1G | 功能描述:IGBT 1200V 36A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GT120BRG | 功能描述:IGBT 1200V 36A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GT120SRG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT15GT60BR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60BRD | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
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