參數(shù)資料
型號: APT11N80BC3
元件分類: JFETs
英文描述: 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247, 3 PIN
文件頁數(shù): 4/5頁
文件大小: 162K
代理商: APT11N80BC3
APT11N80BC3
050-7136
Rev
B
4-2004
Typical Performance Curves
Crss
Ciss
Coss
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
800
0
10
20
30
40
50
0
20
40
60
80
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
33
10
5
1
.1
16
12
8
4
0
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100S
TJ=+150°C
TJ=+25°C
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
5
8
11
14
17
20
5
8
11
14
17
20
5
8
11
14
17
20
0
5
10 15 20 25 30 35 40 45 50
V
DD = 533V
I
D = 11A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
VDS=400V
VDS=160V
VDS=640V
I
D = 11A
td(on)
td(off)
Eon
Eoff
70
60
50
40
30
20
10
0
500
400
300
200
100
0
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
10,000
1,000
100
10
1
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
40
30
20
10
0
500
400
300
200
100
0
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參數(shù)描述
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