參數資料
型號: APT11N80BC3
元件分類: JFETs
英文描述: 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247, 3 PIN
文件頁數: 1/5頁
文件大?。?/td> 162K
代理商: APT11N80BC3
TO-247
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
800
0.39
0.45
0.5
20
200
±100
2.1
3
3.9
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
Ultra low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Q
g
Avalanche Energy Rated
TO-247 Package
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 7.1A)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 680A)
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
050-7136
Rev
B
4-2004
APT11N80BC3
800V 11A 0.45
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS = 640V, ID = 11A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
APT11N80BC3
800
11
33
±20
±30
156
1.25
-55 to 150
260
50
11
0.2
470
相關PDF資料
PDF描述
APT11N80BC3 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
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相關代理商/技術參數
參數描述
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APT11N80KC3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET
APT11N80KC3G 功能描述:MOSFET N-CH 800V 11A TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT1201R2BFLL 制造商:Microsemi Corporation 功能描述:
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