參數(shù)資料
型號(hào)： APT11GP60BDQBG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 41 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 7/7頁(yè)
文件大?。?/td> 212K
代理商： APT11GP60BDQBG
050-7447
Rev
A
3-2005
APT11GP60BDQB
TYPICAL PERFORMANCE CURVES
T0-247 Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 121°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 11A
Forward Voltage
I
F = 22A
I
F = 11A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.20
2.90
1.90
APT11GP60BDQB
8
14
110
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
相關(guān)PDF資料
PDF描述
APT11GP60BDQB 41 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT11GP60BDQB 41 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT11N80BC3 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT11GP60K 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT11GP60KG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube
APT11GP60SA 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT11N80BC3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET
APT11N80BC3G 功能描述:MOSFET N-CH 800V 11A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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