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參數(shù)資料
| 型號： | APT11GP60BDQB |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 212K |
| 代理商： | APT11GP60BDQB |
050-7447
Rev
A
3-2005
APT11GP60BDQB
TYPICAL PERFORMANCE CURVES
T0-247 Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 121°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 11A
Forward Voltage
I
F = 22A
I
F = 11A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.20
2.90
1.90
APT11GP60BDQB
8
14
110
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
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PDF描述 |
|---|---|
| APT11GP60BDQB | 41 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT11N80BC3 | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT11N80BC3 | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1201R2BFLL | 12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT11GP60BDQBG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT11GP60K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT11GP60SA | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11N80BC3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
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