- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36704 > APT11GP60BDQB (MICROSEMI POWER PRODUCTS GROUP) 41 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF資料下載
參數(shù)資料
| 型號： | APT11GP60BDQB |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 212K |
| 代理商： | APT11GP60BDQB |
050-7447
Rev
A
3-2005
APT11GP60BDQB
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 11A
TJ = 150°C, RG = 5, VGE =
15V, L = 100H,VCE = 600V
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 11A
RG = 5
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 11A
RG = 5
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
MIN
TYP
MAX
1210
110
6
7.5
40
8
13
45
7
9
29
50
46
85
90
7
9
65
85
46
185
215
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
°C/W
gm
MIN
TYP
MAX
0.67
2.7
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RΘJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2 test circuit. (See Figures 21, 22.)
6E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT11GP60BDQB | 41 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT11N80BC3 | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT11N80BC3 | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1201R2BFLL | 12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1201R2SFLL | 12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT11GP60BDQBG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT11GP60K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT11GP60SA | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11N80BC3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。