參數(shù)資料
型號(hào)： APT11GF120BRDQ1
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
封裝： TO-247, 3 PIN
文件頁數(shù)： 1/9頁
文件大?。?/td> 429K
代理商： APT11GF120BRDQ1
052-6212
Rev
A
12-2005
APT11GF120BRDQ1(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 500A)
Gate Threshold Voltage (V
CE = VGE, I C = 350A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 8A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 8A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT11GF120BRDQ1(G)
1200
±30
25
14
24
24A @ 1200V
156
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.5
3.0
3.1
500
3000
±100
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
RBSOA and SCSOA Rated
Ultra Low Leakage Current
Ultrafast Soft Recovery Anti-parallel Diode
FAST IGBT & FRED
1200V
APT11GF120BRDQ1
APT11GF120BRDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
E
G
TO-2
47
G
C
E
相關(guān)PDF資料
PDF描述
APT11GF120BRD 22 A, 1200 V, N-CHANNEL IGBT, TO-247
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APT11GP60BDQB 41 A, 600 V, N-CHANNEL IGBT, TO-247AD
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT11GF120BRDQ1G 功能描述:IGBT 1200V 25A 156W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT11GF120KR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:FAST IGBT
APT11GF120KRG 功能描述:IGBT 1200V 25A 156W TO220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT11GP60BDQB 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT11GP60BDQBG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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