參數(shù)資料
型號: APT100GT120JU3
元件分類: IGBT 晶體管
英文描述: 140 A, 1200 V, N-CHANNEL IGBT
封裝: ISOTOP-4
文件頁數(shù): 1/7頁
文件大小: 607K
代理商: APT100GT120JU3
APT100GT120JU3
A
PT
100G
T
120J
U
3–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
1- 7
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
IC1
TC = 25°C
140
IC2
Continuous Collector Current
TC = 80°C
100
ICM
Pulsed Collector Current
TC = 25°C
280
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
480
W
IFAV
Maximum Average Forward Current
Duty cycle=0.5
TC = 80°C
27
IFRMS
RMS Forward Current (Square wave, 50% duty)
34
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C
A
E
G
VCES = 1200V
IC = 100A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
ISOTOP Buck chopper
Trench IGBT
A
C
G
E
相關(guān)PDF資料
PDF描述
APT10GT60KR 20 A, 600 V, N-CHANNEL IGBT, TO-220
APT10M09B2VR 100 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10M09LVR 100 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT10M11LVFR 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT10M11B2VFR 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT100GT60B2R 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT
APT100GT60B2RG 功能描述:IGBT 600V 148A 500W SOT247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT100GT60JR 功能描述:IGBT 600V 148A 500W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT100GT60JRDL 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube
APT100GT60JRDQ4 功能描述:IGBT 600V 148A 500W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B