參數(shù)資料
型號(hào): APT10090SLLG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi): JFETs
英文描述: 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁(yè)數(shù): 5/5頁(yè)
文件大?。?/td> 95K
代理商: APT10090SLLG
050-7002
Rev
C
7-2003
APT10090BLL - SLL
Typical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAK Package Outline
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
T
J
= 125 C
90%
t
d(off)
10%
0
90%
t
f
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
10 %
t
d(on)
90%
5 %
10 %
t
r
5 %
Gate Voltage
T
J
= 125 C
Switching Energy
Drain Current
Drain Voltage
IC
D.U.T.
APT15DF120B
VCE
Figure 20, Inductive Switching Test Circuit
G
VDD
相關(guān)PDF資料
PDF描述
APT10090BLL 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT10090SLL 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
APT100GT120JU3 140 A, 1200 V, N-CHANNEL IGBT
APT10GT60KR 20 A, 600 V, N-CHANNEL IGBT, TO-220
APT10M09B2VR 100 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
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