- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51261 > APT10090SLLG (MICROSEMI POWER PRODUCTS GROUP) 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT10090SLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 95K |
| 代理商： | APT10090SLLG |
APT10090BLL - SLL
050-7002
Rev
C
7-2003
Typical Performance Curves
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
10
20
30
40
50
60
70
80
90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VDS=500V
VDS=200V
VDS=800V
I
D
= 12A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
10,000
1,000
100
10
200
100
10
1
5
10
15
20
0
5
101520
5
10
15
20
0
5
1015
20
2530
35 40
45
50
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
40
30
20
10
0
1200
1000
800
600
400
200
0
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
V
DD
= 670V
I
D
= 12A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
48
10
1
.1
16
12
8
4
0
10mS
1mS
100S
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
相關PDF資料 |
PDF描述 |
|---|---|
| APT10090BLL | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT10090SLL | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT100GT120JU3 | 140 A, 1200 V, N-CHANNEL IGBT |
| APT10GT60KR | 20 A, 600 V, N-CHANNEL IGBT, TO-220 |
| APT10M09B2VR | 100 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT100DL60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Ultrasoft Recovery Rectifi er Diode |
| APT100DL60BG | 制造商:Microsemi Corporation 功能描述:FAST RECOVERY EPITAXIAL DIODE - DL - Rail/Tube 制造商:Microsemi Corporation 功能描述:DIODE ULT SOFT 600V 100A TO-247 |
| APT100DL60HJ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP Fast Diode Full Bridge Power Module |
| APT100DL60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Ultrasoft Recovery Rectifi er Diode |
| APT100DL60SG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Ultrasoft Recovery Rectifi er Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復。