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參數(shù)資料
| 型號： | APT10090HLL |
| 元件分類： | JFETs |
| 英文描述： | 9.3 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 封裝： | HERMETIC SEALED, TO-258, 3 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 144K |
| 代理商： | APT10090HLL |
050-7338
Rev
A
8-2004
APT10090HLL
Typical Performance Curves
ID
D.U.T.
VDS
Figure 20, Inductive Switching Test Circuit
VDD
G
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
T
J
= 125 C
90%
t
d(off)
10%
0
90%
tf
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
10 %
t
d(on)
90%
5 %
10 %
t
r
5 %
Gate Voltage
TJ = 125 C
Switching Energy
Drain Current
Drain Voltage
TO-258 Package Outline
5.08 (.200) BSC
1.14 (.045)
0.88 (.035)
17.65 (.695)
17.39 (.685)
4.19 (.165)
3.94 (.155)
Drain
Source
Gate
1.65 (.065)
1.39 (.055)
Dia. Typ.
3 Leads
17.96 (.707)
17.70 (.697)
19.05 (0.750)
12.70 (0.500)
21.21 (.835)
20.70 (.815)
8.89 (.350)
8.63 (.340)
Dimensions in Millimeters and (Inches)
3.56 (.140) BSC
6.86 (.270)
6.09 (.240)
13.84 (.545)
13.58 (.535)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
APT15DF120
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT10090SFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10090SFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube |
| APT10090SLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10090SLLG | 功能描述:MOSFET N-CH 1000V 12A D3PAK RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT100DL60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Ultrasoft Recovery Rectifi er Diode |
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