參數(shù)資料
型號(hào): APM4461
廠商: Anpec Electronics Corporation
英文描述: P-Channel Enhancement Mode MOSFET
中文描述: P溝道增強(qiáng)型MOS管
文件頁(yè)數(shù): 7/9頁(yè)
文件大?。?/td> 568K
代理商: APM4461
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003
APM4461
www.anpec.com.tw
7
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
°
temperature
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183
°C to Peak)
3
°C/second max.
10
°C /second max.
Preheat temperature 125 ± 25
°C)
120 seconds max
Temperature maintained above 183
°C
60 – 150 seconds
Time within 5
°C of actual peak temperature 10 –20 seconds
60 seconds
Peak temperature range
220 +5/-0
°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate
6
°C /second max.
10
°C /second max.
Time 25
°C to peak temperature
6 minutes max.
Package Reflow Conditions
pkg. thickness
≥≥≥≥ 2.5mm
and all bgas
pkg. thickness < 2.5mm and
pkg. volume
≥≥≥≥ 350 mm
pkg. thickness < 2.5mm and pkg.
volume < 350mm
Convection 220 +5/-0
°C
Convection 235 +5/-0
°C
VPR 215-219
°C
VPR 235 +5/-0
°C
IR/Convection 220 +5/-0
°C
IR/Convection 235 +5/-0
°C
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reference JEDEC Standard J-STD-020A APRIL 1999
Reflow Condition (IR/Convection or VPR Reflow)
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