參數(shù)資料
型號: APM4461
廠商: Anpec Electronics Corporation
英文描述: P-Channel Enhancement Mode MOSFET
中文描述: P溝道增強(qiáng)型MOS管
文件頁數(shù): 5/9頁
文件大小: 568K
代理商: APM4461
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003
APM4461
www.anpec.com.tw
5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
30
0.01
0.1
1
10
0
10
20
30
40
50
60
30
Square Wave Pulse Duration (sec)
Normalized
Effective
Transient
Thermal
Impedance
Normalized Transient Thermal Transient Impedence, Junction to Ambient
D=0.1
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA=50°C/W
3. T
JM-TA=PDMZthJA
SINGLE PULSE
D=0.02
D=0.05
D=0.2
Duty Cycle=0.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
25
Typical Characteristics (Cont.)
Time (sec)
Single Pulse Power
Power
(W)
Source-Drain Diode Forward Voltage
-I
S
-Source
Current
(A)
-V
SD-Source to Drain Voltage
T
J=25°C
T
J=150°C
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