參數(shù)資料
型號: APM4461
廠商: Anpec Electronics Corporation
英文描述: P-Channel Enhancement Mode MOSFET
中文描述: P溝道增強型MOS管
文件頁數(shù): 3/9頁
文件大?。?/td> 568K
代理商: APM4461
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003
APM4461
www.anpec.com.tw
3
012
345
0
5
10
15
20
25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
5
10
15
20
25
0
5
10
15
20
25
0.00
0.01
0.02
0.03
0.04
0.05
0.06
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
Typical Characteristics
Transfer Characteristics
-V
GS-Gate-to-Source Voltage (V)
-I
D
-Drain
Current
(A)
Threshold Voltage vs. Junction Temperature
T
j-Junction Temperature (°C)
-I
DS=250A
T
J=125°C
T
J=25°C
T
J=-55°C
On-Resistance vs. Drain Current
-I
DS-Drain Current (A)
R
DS(ON)
-On-Resistance
(
)
-V
GS=10V
-V
GS=4.5V
Output Characteristics
-V
DS-Drain-to-Source Voltage (V)
-I
D
-Drain
Current
(A)
-V
GS=3,4,5,6,7,8,9,10V
-V
GS=2V
-V
GS(th)
-Threshold
V
oltage
(V)
(Normalized)
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