- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51260 > AP9997GK (ADVANCED POWER ELECTRONICS CORP) 3.2 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | AP9997GK |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.2 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | AP9997GK |
AP9997GK
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
12
0
4
8
12
16
20
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =3A
V DS =80V
10
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
10V
QGS
QGD
QG
Charge
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 120℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Operation in this area
limited by RDS(ON)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP99T03GP-HF | 120 A, 30 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP99T06AGP-HF | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APL502B2 | 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APL502L | 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APL502J | 52 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9997GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9998GH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9998GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。