參數(shù)資料
型號(hào): AP99T03GP-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 120 A, 30 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 94K
代理商: AP99T03GP-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Ultra-low On-resistance
RDS(ON)
2.5mΩ
▼ Fast Switching Characteristic
ID
200A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.8
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
AP99T03GP-HF
Halogen-Free Product
201006211
800
120
200
Parameter
Rating
Drain-Source Voltage
30
Total Power Dissipation
156
-55 to 150
Gate-Source Voltage
+20
Pulsed Drain Current
1
Continuous Drain Current, VGS @ 10V
3
Continuous Drain Current (Chip)
Continuous Drain Current, VGS @ 10V
3
120
Parameter
1
Total Power Dissipation
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Thermal Data
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220(P)
The TO-220 package is widly preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
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