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參數(shù)資料
| 型號： | APL502B2 |
| 元件分類： | JFETs |
| 英文描述： | 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | B2, TMAX-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 71K |
| 代理商： | APL502B2 |
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5896
Rev
D
8-2003
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Current 2 (V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 12V)
Drain-Source On-State Resistance
2 (V
GS
= 12V, 29A)
Zero Gate Voltage Drain Current (V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 400V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
MIN
TYP
MAX
500
58
0.09
25
250
±100
24
UNIT
Volts
Amps
Ohms
A
nA
Volts
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
APT Website - http://www.advancedpower.com
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
Higher FBSOA
Higher Power Dissipation
Popular T-MAX or TO-264 Package
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL502B2-L
500
58
232
±30
±40
730
5.84
-55 to 150
300
58
50
3000
T-MAX
TO-264
B2
APL502B2
APL502L
500V
58A 0.090
G
D
S
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APL502L | 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APL502J | 52 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APL602L | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APL602B2 | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APL602L | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APL502B2G | 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APL502J | 功能描述:MOSFET N-CH 500V 52A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APL502L | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:LINEAR MOSFET |
| APL502LG | 功能描述:MOSFET N-CH 500V 58A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APL5101 | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:150mA, 4uA Quiescent Current Regulator |
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