- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36698 > AP9916GJ (ADVANCED POWER ELECTRONICS CORP) 35 A, 18 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PDF資料下載
參數(shù)資料
| 型號(hào)： | AP9916GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 18 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP9916GJ |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
18
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
-
25
mΩ
VGS=2.5V, ID=5.2A
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
18
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=18V, VGS=0V
-
25
uA
Drain-Source Leakage Current (Tj=125
oC)
VDS=18V ,VGS=0V
-
250
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=18A
-
17.5
-
nC
Qgs
Gate-Source Charge
VDS=18V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
7.9
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
7.3
-
ns
tr
Rise Time
ID=18A
-
98
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
25.6
-
ns
tf
Fall Time
RD=0.56Ω
-98
-
ns
Ciss
Input Capacitance
VGS=0V
-
527
-
pF
Coss
Output Capacitance
VDS=18V
-
258
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
112
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.3V
-
35
A
ISM
Pulsed Source Current ( Body Diode )
1
--
90
A
VSD
Forward On Voltage
2
Tj=25℃, IS=35A, VGS=0V
-
1.3
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9916GH/J
± 8V
±100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP9916GH | 35 A, 18 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP9922GEO | 6400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AP9924GO | 6.8 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AP9926GEO | 4600 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AP9936GM-HF | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9916H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9916J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9918GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP9918GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP9918H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。