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參數(shù)資料
| 型號(hào)： | AP9916GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 35 A, 18 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | AP9916GH |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼
▼ Low on-resistance
BVDSS
18V
▼
▼ Capable of 2.5V gate drive
RDS(ON)
25mΩ
▼
▼ Low drive current
ID
35A
▼
▼ Surface mount package
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=125℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200723011
AP9916GH/J
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
18
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
35
Continuous Drain Current, VGS @ 4.5V
16
Pulsed Drain Current
1
90
Total Power Dissipation
50
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.4
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
± 8
G
D
S
TO-252
G
D
S
G
D
S
TO-251
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9916GJ | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP9916H | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9916J | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9918GH | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP9918GJ | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
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