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參數(shù)資料
| 型號(hào)： | AP9916GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 35 A, 18 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | AP9916GH |
AP9916GH/J
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Reverse Diode
Junction Temperature
0.2
0.45
0.7
0.95
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS
(t
h
)
(V)
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V SD (V)
I
S(A
)
T j =25
o C
T j =150
o C
10
100
1000
1
5
9
13
17
21
25
V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
45
Q G , Total Gate Charge (nC)
V
GS
,
Ga
te
to
So
urce
Vo
lta
g
e(
V
)
I D =18A
V DS =15V
V DS =18V
V DS =10V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9916GJ | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP9916H | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9916J | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9918GH | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP9918GJ | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
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