參數(shù)資料
型號(hào): AP9915GK
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類(lèi): JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 6.2 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT PACKAGE-4
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 105K
代理商: AP9915GK
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP9915GK
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
Q
G
, Total Gate Charge (nC)
V
G
I
D
=6A
V
DS
=16V
V
DS
=12V
V
DS
=10V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=90
o
C/W Per Unit Base
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
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AP9916GJ 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive