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參數(shù)資料
| 型號(hào)： | AP9915GK |
| 廠(chǎng)商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 6.2 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | AP9915GK |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
ΔB
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.03
-
V/
℃
R
DS(ON)
V
GS
=4.5V, I
D
=6A
-
-
50
m
Ω
V
GS
=2.5V, I
D
=4A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=±12V
I
D
=10A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=10A
R
G
=3.3
Ω,
V
GS
=5V
R
D
=1
Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
-
-
80
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
0.5
-
1.2
V
Forward Transconductance
-
13
-
S
uA
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
1
Drain-Source Leakage Current (T
j
=70
o
C)
-
-
25
uA
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
-
-
nA
-
5
8
nC
Gate-Source Charge
-
1
-
nC
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
-
2
-
nC
-
8
-
ns
Rise Time
-
55
-
ns
Turn-off Delay Time
-
10
-
ns
Fall Time
-
3
-
ns
Input Capacitance
-
360
580
pF
Output Capacitance
-
70
-
pF
Reverse Transfer Capacitance
-
50
-
pF
Gate Resistance
f=1.0MHz
-
0.78
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
SD
t
rr
Q
rr
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=2.5A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/μs
-
-
-
1.3
-
V
ns
17
Reverse Recovery Charge
-
9
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.t
≦
10sec , Surface mounted on 1 in
2
copper pad of FR4 board.
2/4
AP9915GK
±
100
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| AP9916H | N-CHANNEL ENHANCEMENT MODE |
| AP9916J | N-CHANNEL ENHANCEMENT MODE |
| AP9918H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9918J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9915H | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9915J | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9915K | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:N CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9916GH | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP9916GJ | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
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