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參數(shù)資料
| 型號(hào)： | AP9467GS |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, TO-263, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | AP9467GS |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
40V
▼ Single Drive Requirement
RDS(ON)
11mΩ
▼ Fast Switching Characteristics
ID
52A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
℃
/W
Rthj-a
40
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃
/W
Data and specifications subject to change without notice
1
AP9467GS
RoHS-compliant Product
200810072
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Parameter
Rating
Drain-Source Voltage
40
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
52
Continuous Drain Current, VGS @ 10V
33
Pulsed Drain Current
1
200
Total Power Dissipation
44.6
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.36
Thermal Data
Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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