參數(shù)資料
型號: AP9468GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 40 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/4頁
文件大?。?/td> 216K
代理商: AP9468GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
40V
▼ Simple Drive Requirement
RDS(ON)
7mΩ
▼ Fast Switching Characteristic
ID
14.6A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
/W
Data and specifications subject to change without notice
RoHS-compliant Product
Thermal Data
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Storage Temperature Range
Continuous Drain Current
3
11.7
Pulsed Drain Current
1
60
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
201015071-1/4
AP9468GM
Rating
40
± 20
14.6
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widly preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
S
G
D
SO-8
G
D
S
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