參數(shù)資料
型號: AP9469GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 18 A, 40 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 59K
代理商: AP9469GJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
40V
▼ Simple Drive Requirement
RDS(ON)
50mΩ
▼ Fast Switching Characteristic
ID
18A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200531051-1/4
Thermal Data
Parameter
Pulsed Drain Current
1
50
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.21
Storage Temperature Range
Total Power Dissipation
26
-55 to 150
Continuous Drain Current
18
Continuous Drain Current
11
Drain-Source Voltage
40
Gate-Source Voltage
±20
AP9469GH/J
Parameter
Rating
Pb Free Plating Product
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9469GJ) is available for low-profile applications.
G
D
S
TO-251(J)
G D
S
TO-252(H)
G
D
S
相關(guān)PDF資料
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