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參數(shù)資料
| 型號(hào)： | AP9469GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 40 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | AP9469GJ |
AP9469GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
10
20
30
02
46
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
10
20
30
0246
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
35
75
115
155
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =8 A
T C =25
o C
0.6
1.0
1.4
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =12 A
V G =10V
0
2
4
6
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
0.2
0.6
1
1.4
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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相關(guān)代理商/技術(shù)參數(shù) |
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