參數(shù)資料
型號: AP6900GH-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 45 A, 30 V, 0.0062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5
文件頁數(shù): 5/7頁
文件大小: 119K
代理商: AP6900GH-HF
AP6900GH-HF
Channel-1
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
04
8
12
16
20
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =18 A
V DS =1 5 V
V DS =18 V
V DS =24V
0
400
800
1200
1600
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=75
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T A =25
o C
Single Pulse
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
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