參數(shù)資料
型號(hào): AP6900GH-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 45 A, 30 V, 0.0062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 119K
代理商: AP6900GH-HF
Advanced Power
DUAL N-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
CH-1 BVDSS
30V
▼ Fast Switching Performance
RDS(ON)
6.2mΩ
▼ Two Independent Device
ID
72A
▼ Halogen Free & RoHS Compliant Product
CH-2 BVDSS
30V
RDS(ON)
10mΩ
Description
ID
45A
Absolute Maximum Ratings
Symbol
Rating
Units
Channel-2
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+ 20
V
ID@TC=25℃
45
A
ID@TA=25℃
Continuous Drain Current
3
14.1
A
ID@TA=70℃
Continuous Drain Current
3
11.2
A
IDM
Pulsed Drain Current
1
60
A
PD@TA=25℃
Total Power Dissipation
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-c (CH-1)
Maximum Thermal Resistance, Junction-case
2.5
/W
Rthj-c (CH-2)
Maximum Thermal Resistance, Junction-case
4.0
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
42
/W
Data and specifications subject to change without notice
20090420pre
1
Continuous Drain Current
72
14
Thermal Data
Parameter
72
3
AP6900GH-HF
Preliminary
Parameter
Channel-1
30
+ 20
18
G2
D2
S2
G1
D1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
SDPAK
TM
G1
S2
G2
D1 (TAB1)
D2 (TAB2)
SDPAK
TM used APEC innovated package and provides two
independent device that is suitable and optimum for DC/DC
power application.
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