參數(shù)資料
型號: AP6901GSM-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.0165 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/9頁
文件大?。?/td> 89K
代理商: AP6901GSM-HF
Advanced Power
DUAL N-CHANNEL MOSFET WITH
Electronics Corp.
SCHOTTKY DIODE
▼ Simple Drive Requirement
CH-1
BVDSS
30V
▼ DC-DC Converter Suitable
RDS(ON)
16.5mΩ
▼ Fast Switching Performance
ID
7.1A
▼ RoHS Compliant & Halogen-Free
CH-2
BVDSS
30V
RDS(ON)
16mΩ
Description
ID
9.2A
Absolute Maximum Ratings
Symbol
Rating
Units
Channel-2
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
9.2
A
ID@TA=70℃
Continuous Drain Current
3
7.4
A
IDM
Pulsed Drain Current
1
30
A
PD@TA=25℃
Total Power Dissipation
2.2
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Units
Max.
Rthj-a (CH-1)
Thermal Resistance Junction-ambient
3
90
℃/W
Rthj-a (CH-2)
Thermal Resistance Junction-ambient
3
55
℃/W
Data and specifications subject to change without notice
AP6901GSM-HF
Channel-1
Halogen-Free Product
Thermal Data
Typ.
70
Parameter
7.1
5.7
30
+20
30
1.4
1
42
Value
200911131
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D1
G2
S2/A
G1
S1/D2
SO-8
G1
D1
S1/D2
G2
N-Channel 1
MOSFET
S2/A
N-Channel 2
MOSFET
Schottky Diode
相關(guān)PDF資料
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