參數(shù)資料
型號(hào): AP6910GSM-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類(lèi): JFETs
英文描述: 30 V, 0.0158 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 84K
代理商: AP6910GSM-HF
Advanced Power
DUAL N-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Low On-resistance
CH-1
BVDSS
30V
▼ Fast Switching Characteristic
RDS(ON)
15.8mΩ
▼ Surface Mount Package
ID
9A
▼ RoHS Compliant & Halogen-Free
CH-2
BVDSS
30V
RDS(ON)
15.8mΩ
Description
ID
9A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
CH-1
CH2
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
9
A
ID@TA=70℃
Continuous Drain Current
3
7.2
A
IDM
Pulsed Drain Current
1
40
A
PD@TA=25℃
Total Power Dissipation
2.0
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃/W
Data and specifications subject to change without notice
200912282
Parameter
1
Thermal Data
AP6910GSM-HF
Halogen-Free Product
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G2
S2
G1
S1/D2
SO-8
G1
D1
S1/D2
G2
N-Channel 1
MOSFET
N-Channel 2
MOSFET
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