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參數(shù)資料
| 型號(hào)： | AP6680AGM |
| 廠(chǎng)商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 196K |
| 代理商： | AP6680AGM |
050-7407
Rev
E
8-2004
APT35GP120B2DF2
TYPICAL PERFORMANCE CURVES
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE = 15V)
FIGURE 2, Output Characteristics (V
GE = 10V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
TC=25°C
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
TJ = 25°C
TJ = 125°C
TJ = -55°C
IC = 35A
TJ = 25°C
TC=125°C
TC=25°C
TC=125°C
VCE= 960V
VCE= 600V
VCE= 240V
250s PULSE TEST
<0.5 % DUTY CYCLE
IC=17.5A
IC= 35A
IC= 70A
IC=70A
IC= 17.5A
IC= 35A
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
6
5
4
3
2
1
0
1.2
1.15
1.1
1.05
1.0
0.95
0.90
0.85
0.8
01
23
45
01
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160
6
8
10
12
14
16
0
25
50
75
100
125
-50
-25
0
25
50
75 100 125 150
-50
-25
0
25
50
75 100 125 150
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
140
120
100
80
60
40
20
0
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