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參數(shù)資料
| 型號： | AP4957AGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.4 A, 30 V, 0.026 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 178K |
| 代理商： | AP4957AGM |
APT33N90JCCU3
APT
33N90JCCU3
–
Rev
0
Septem
ber
,2009
www.microsemi.com
3 – 5
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
CoolMOS
0.43
RthJC
Junction to Case Thermal Resistance
SiC Diode
1.65
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG
Storage Temperature Range
-40
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Typical CoolMOS performance Curve
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10
15
20
25
30
ID, Drain Current (A)
Fr
equ
e
ncy
(kHz
)
Operating Frequency vs Drain Current
VDS=600V
D=50%
RG=7.5
TJ=125°C
TC=75°C
Switching Energy vs Current
Eon
Eoff
0
1
2
5
10
15202530
3540
ID, Drain Current (A)
Eo
n
an
d
E
o
ff
(mJ)
VDS=600V
RG=7.5
TJ=125°C
L=100H
ON resistance vs Temperature
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
D
S
(on)
,
D
rai
n
t
o
S
o
ur
ce
ON
resi
stance
(N
o
rma
liz
e
d
)
Switching Energy vs Gate Resistance
Eon
Eoff
0
1
2
3
5
1015
20
2530
35
Gate Resistance (Ohms)
Swi
tchi
n
g
E
n
er
gy
(m
J)
VDS=600V
ID=26A
TJ=125°C
L=100H
Source
Gate
Drain
Anode
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4957GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4957M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4959GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4961GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP4963GEM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
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