參數(shù)資料
型號(hào)： AP4963GEM-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 6 A, 30 V, 0.036 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁數(shù)： 1/4頁
文件大?。?/td> 95K
代理商： AP4963GEM-HF
Advanced Power
DUAL P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-30V
▼ Lower Gate Charge
RDS(ON)
36mΩ
▼ Fast Switching Performance
ID
-6A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃
/W
Data and specifications subject to change without notice
1
AP4963GEM-HF
Rating
- 30
+20
- 6
200909071
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
- 4.8
Pulsed Drain Current
1
- 30
Halogen-Free Product
Thermal Data
Parameter
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S1
G1
S2
G2
D1
D2
SO-8
S1
G1
D1
S2
G2
D2
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