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參數(shù)資料
| 型號： | AP4957AGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.4 A, 30 V, 0.026 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 178K |
| 代理商： | AP4957AGM |
APT33N90JCCU3
APT
33N90JCCU3
–
Rev
0
Septem
ber
,2009
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 900V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 900V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 26A
100
120
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3mA
2.5
3
3.5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6.8
Coss
Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz
0.33
nF
Qg
Total gate Charge
270
Qgs
Gate – Source Charge
32
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 26A
115
nC
Td(on)
Turn-on Delay Time
70
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
400
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω
25
ns
Eon
Turn-on Switching Energy
0.9
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
0.75
mJ
Eon
Turn-on Switching Energy
1.3
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
0.85
mJ
SiC chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
32
200
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 175°C
56
1000
A
IF
DC Forward Current
Tc = 100°C
10
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 10A
Tj = 175°C
2.3
3
V
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/s
40
nC
f = 1MHz, VR = 200V
96
C
Total Capacitance
f = 1MHz, VR = 400V
69
pF
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相關(guān)代理商/技術(shù)參數(shù) |
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| AP4957GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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