參數(shù)資料
型號: AP4835GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/5頁
文件大?。?/td> 206K
代理商: AP4835GM
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-30V
▼ Low On-resistance
RDS(ON)
20mΩ
▼ Fast Switching
ID
-9.2A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
/W
Data and specifications subject to change without notice
Parameter
Drain-Source Voltage
Continuous Drain Current
3
-7.4
Thermal Data
Gate-Source Voltage
Continuous Drain Current
3
Pulsed Drain Current
1
-50
Linear Derating Factor
Storage Temperature Range
0.02
1
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
AP4835GM
Rating
- 30
+25
-9.2
RoHS-compliant Product
200811045
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
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