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參數(shù)資料
| 型號(hào)： | AP501 |
| 元件分類： | 放大器 |
| 英文描述： | 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, FM-6 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 380K |
| 代理商： | AP501 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 5 February 2006
AP501
PCS-band 4W HBT Amplifier Module
Product Information
The Communications Edge
TM
Product Features
1930 – 1990 MHz
32.5 dB Gain
+36 dBm P1dB
-62 dBc ACPR
@ 27 dBm IS-95A linear power
-55 dBc ACLR
@ 26.5 dBm wCDMA linear power
+12 V Single Supply
Power Down Mode
Bias Current Adjustable
RoHS-compliant flange-mount pkg
Applications
Final stage amplifiers for repeaters
Optimized for driver amplifier
PA mobile infrastructure
Product Description
The AP501 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package.
The multi-stage
amplifier module has 32.5 dB gain, while being able to
achieve high performance for PCS-band applications with
+36 dBm of compressed 1dB power. The module has been
internally optimized for driver applications provide -62 dBc
ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR
at 26.5 for wCDMA applications. The module can be biased
down for current when higher efficiency is required.
The AP501 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
The AP501 is targeted for use as a driver or final stage amplifier
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
Functional Diagram
Top View
Pin No.
Function
1
RF Output
2 / 4
Vcc
3 / 5
Vpd
6
RF Input
Case
Ground
Specifications
25 C, Vcc=12V, Vpd=5V, Icq=820mA, R7=0, 50 unmatched fixture
Parameter
Units Min Typ Max
Operational Bandwidth
MHz
1930 – 1990
Test Frequency
MHz
1960
Power Gain
dB
30
32.4
30.5
IS-95A ACPR @ 27dBm (1)
dBc
-61.8
-55
wCDMA ACLR @ 26.5dBm (2)
dBc
-55
Input Return Loss
dB
22
Output Return Loss
dB
6
Output P1dB
dBm
+36
Output IP3
dBm
+52
Operating Current @ 27 dBm
mA
790
840
940
Quiescent Current, Icq
mA
780
820
920
Device Voltage, Vcc
V
+12
Device Voltage, Vpd (3)
V
+5
Load Stability
VSWR
10:1
1. IS-95A signal modulation, 9 channels forward, 1.23 MHz BW, ±885 kHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”O(jiān)N”
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
RF Input Power (continuous)
with output terminated in 50
+15 dBm
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (4)
Parameter
Units Config1 Config2
Operating Current @ 27 dBm
mA
840
420
Quiescent Current, Icq
mA
820
250
Device Voltage, Vcc
V
+12
R7 value
0
730
Test Frequency
MHz
1960
Power Gain
dB
32.4
30.5
IS-95A ACPR @ 27dBm (1)
dBc
-61.8
-53
wCDMA ACLR @ 26.5dBm (2)
dBc
-55
-49
Input Return Loss
dB
22
20
Output Return Loss
dB
6
8
Output P1dB
dBm
+36
Output IP3
dBm
+52
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Performance is shown at 25 C, Vcc=12V, Vpd=5V, Icq=820mA, R7=0, 50 unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 C, Vcc=12V, Vpd=5V, Icq=250mA, R7=730, 50 tuned fixture.
Ordering Information
Part No.
Description
AP501
PCS-band 4W HBT Amplifier Module
AP501-PCB
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
1 2 3
4 5 6
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