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參數(shù)資料
| 型號： | AP55T10GH-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 56 A, 100 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | AP55T10GH-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower Gate Charge
RDS(ON)
16.5mΩ
▼ Fast Switching Characteristic
ID
56A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
62.5
℃/W
Data and specifications subject to change without notice
AP55T10GH-HF
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
56
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
40
Pulsed Drain Current
1
160
Total Power Dissipation
125
-55 to 175
Total Power Dissipation
2
Operating Junction Temperature Range
-55 to 175
201009201
Thermal Data
Parameter
1
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AP55T10GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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