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參數(shù)資料
| 型號(hào)： | AP4532GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 112K |
| 代理商： | AP4532GM |
P-Channel
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP4532GM
0.01
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V SD (V)
-I
S
(A)
T j =25
o C
T j =150
o C
10
100
1000
10000
1
5
9
131721
2529
-V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T j ,Junction Temperature (
o C)
-V
GS
(t
h
)(V
)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
18
20
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =-4A
V DS =-10V
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