參數(shù)資料
型號: APTCV60TLM45T3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 100 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT PACKAGE-32
文件頁數(shù): 1/11頁
文件大小: 281K
代理商: APTCV60TLM45T3G
APTCV60TLM45T3G
APT
C
V60T
LM
45T
3G
Rev
0
Mar
ch,
2009
www.microsemi.com
1- 11
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Trench & Field Stop IGBT Q2, Q3:
VCES = 600V ; IC = 75A @ Tc = 80°C
CoolMOS Q1, Q4:
VDSS = 600V ; ID = 38A @ Tc = 80°C
Application
Solar converter
Uninterruptible Power Supplies
Features
Q2, Q3 Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Q1, Q4 CoolMOS
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Three level inverter
CoolMOS & Trench + Field Stop IGBT
Power Module
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