參數(shù)資料
型號(hào)： AP4501CGM-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 7 A, 30 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 120K
代理商： AP4501CGM-HF
AP4501CGM-HF
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
30
-30
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
02
46
8
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =7 A
V DS =25 V
0
100
200
300
400
500
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rm
aliz
ed
T
h
er
m
a
lRes
pon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
相關(guān)PDF資料
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