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參數(shù)資料
| 型號(hào)： | AP30N30WI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3PF, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 111K |
| 代理商： | AP30N30WI |
AP30N30WI
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
42
201216053-1/4
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
10
20
30
40
50
02
46
8
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
6.0V
5.0V
V G =4. 5 V
0
10
20
30
40
02468
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
V G =4. 5 V
10V
7.0V
6.0V
5.0V
30
70
110
150
190
246
8
10
V GS Gate-to-Source Voltage (V)
R
DS(ON)
(m
ΩΩΩΩ
)
I D =15A
T C =25
o C
0.3
0.8
1.3
1.8
2.3
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =15A
V G =10V
0
3
6
9
12
15
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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