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參數(shù)資料
| 型號： | AP30N30WI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3PF, FULL PACK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 111K |
| 代理商： | AP30N30WI |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=10mA
250
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=10mA
-
0.24
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=15A
-
68
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=1mA
1.5
-
3.5
V
gfs
Forward Transconductance
VDS=10V, ID=15A
-
23
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=250V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=125
oC)
VDS=250V ,VGS=0V
-
200
uA
IGSS
Gate-Source Leakage
VGS= ±30V
-
±1
uA
Qg
Total Gate Charge
2
ID=15A
-
63
100
nC
Qgs
Gate-Source Charge
VDS=200V
-
19
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
14
-
nC
td(on)
Turn-on Delay Time
2
VDS=125V
-
28
-
ns
tr
Rise Time
ID=15A
-
36
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
84
-
ns
tf
Fall Time
RD=8.3Ω
-45
-
ns
Ciss
Input Capacitance
VGS=0V
-
4290 6900
pF
Coss
Output Capacitance
VDS=25V
-
550
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.9
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=30A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
2
IS=15A, VGS=0V
-
235
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
2.24
-
C
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25
oC , V
DD=50V , L=1mH , RG=25Ω , IAS=30A.
2/4
AP30N30WI
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