參數(shù)資料
型號(hào): AP3310GJ-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 105K
代理商: AP3310GJ-HF
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-20V
▼ 2.5V Gate Drive Capability
RDS(ON)
150mΩ
▼ Fast Switching Characteristic
ID
-10A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
5.0
/W
Rthj-a
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
RoHS-compliant Product
1
AP3310GH/J-HF
Rating
- 20
+12
-10
0.01
Continuous Drain Current, VGS @ 4.5V
-6.2
Pulsed Drain Current
1
-24
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
25
-55 to 150
200902096
-55 to 150
Linear Derating Factor
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
G
D
S
G
D
S
TO-252(H)
G
D
S
TO-251(J)
This device is suited for low voltage and battery power applications.
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