參數(shù)資料
型號: AP2N7002K
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: 小信號晶體管
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 4/4頁
文件大?。?/td> 76K
代理商: AP2N7002K
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP2N7002K
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
16
0
0.5
Q
G
, Total Gate Charge (nC)
1
1.5
2
V
G
I
D
=600mA
V
DS
=30V
V
DS
=40V
V
DS
=50V
1
10
100
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0.001
0.010
0.100
1.000
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
t
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270
/W
t
T
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