參數(shù)資料
型號(hào): AP2N7002K
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: 小信號(hào)晶體管
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 76K
代理商: AP2N7002K
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
60V
2
Ω
640mA
Small Package Outline
Surface Mount Device
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Total Power Dissipation
Linear Derating Factor
Units
V
V
mA
mA
mA
W
W/
T
STG
T
J
Symbol
Value
90
Unit
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
1.38
-55 to 150
-55 to 150
0.01
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1,2
500
950
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
±20
640
Parameter
Rating
60
Drain-Source Voltage
Pb Free Plating Product
200209062-1/4
AP2N7002K
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
G
D
S
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