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參數(shù)資料
| 型號： | AP30G120W |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 60 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 84K |
| 代理商： | AP30G120W |
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
V
CES
I
C
High speed switching
Low Saturation Voltage
V
CE(sat)
=3.0V@I
C
=30A
Industry Standard TO-3P Package
RoHS Compliant
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
C
@T
C
=25
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Rthj-c
Rthj-a
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Min.
1200
Typ.
-
Max.
-
Units
V
BV
CES
I
GES
I
CES
V
CE(sat)
-
-
±500
nA
-
-
1
mA
-
3
3.6
V
-
3.8
-
V
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
3
4.4
7
V
nC
-
55
88
-
12
-
nC
-
27
-
nC
-
20
-
ns
-
20
-
ns
-
65
-
ns
-
200
300
ns
-
1.8
-
mJ
-
1.1
-
mJ
-
1320
2110
pF
-
105
-
pF
-
9
-
pF
Data and specifications subject to change without notice
Maximum Lead Temp. for Soldering Purposes
300
Reverse Transfer Capacitance
T
STG
T
J
T
L
Gate-Collector Charge
Total Gate Charge
Parameter
Gate-to-Emitter Leakage Current
Turn-on Delay Time
/W
/W
Thermal Resistance Junction-Case
Parameter
Value
0.6
AP30G120W
1200V
30A
Rating
1200
Collector-Emitter Voltage
Units
V
A
V
160
A
±30
30
60
A
Pulsed Collector Current
1
I
C
@T
C
=100
I
CM
Continuous Collector Current
Gate-Emitter Voltage
Continuous Collector Current
f=1.0MHz
-55 to 150
-55 to 150
V
GE
=15V, I
C
=30A
V
GE
=15V, I
C
=60A
V
CE
=V
GE
, I
C
=1mA
I
C
=30A
V
CC
=500V
V
GE
=15V
V
CC
=600V,
I
c
=30A,
V
GE
=15V,
R
G
=5
,
Inductive Load
V
GE
=±30V, V
CE
=0V
V
CE
=1200V, V
GE
=0V
V
GE
=0V, I
C
=250uA
40
V
GE
=0V
V
CE
=30V
W
Maximum Power Dissipation
Test Conditions
Storage Temperature Range
208
Collect-to-Emitter Breakdown Voltage
Units
Thermal Resistance Junction-Ambient
Output Capacitance
Input Capacitance
P
D
@T
C
=25
Parameter
200411064-1/3
Pb Free Plating Product
Operating Junction Temperature Range
Gate-Emitter Charge
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Leakage Current
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
C
E
G
C
E
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