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參數(shù)資料
| 型號(hào)： | AP30G120W |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 60 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | AP30G120W |
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
Fig 9. Saturation Voltage vs. V
GE
Fig 10. Saturation Voltage vs. V
GE
Fig11. Power Dissipation vs. Junction
Temperature
Fig 12. Gate Charge Characterisitics
3/3
AP30G120W
0
4
8
12
16
20
0
20
40
60
80
Q
G
, Gate Charge (nC)
V
G
I
C
=30A
V
CC
=200V
V
CC
=300V
V
CC
=500V
0
5
10
15
20
0
4
8
12
16
20
V
GE
, Gate-Emitter Voltage(V)
V
C
I
C
=60A
30A
15A
T
C
=25
o
C
0
5
10
15
20
0
4
8
12
16
20
V
GE
, Gate-Emitter Voltage(V)
V
C
I
C
=60A
30A
15A
T
C
=150
o
C
1
10
100
1000
V
CE ,
Collector-Emitter Voltage(V)
I
C
,
Safe Operating Area
V
GE
=15V
T
C
=125
o
C
0.01
0.00001
0.1
1
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
50
100
150
200
250
0
50
100
150
)
200
Junction Temperature (
P
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP30G40GEO-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30N30W | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30N30WI | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30P10GH-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30P10GI | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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