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參數(shù)資料
| 型號(hào)： | AP28G45GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 450 V, N-CHANNEL IGBT |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | AP28G45GEM |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Collector Current v.s.
Gate-Emitter Voltage
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
Fig 6. Collector Current v.s.
Gate-Emitter Voltage
AP28G45GEM
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-50
0
50
100
150
Junction Temperature (
o
C )
V
G
1
3
5
7
9
0
20
40
60
80
100
120
140
160
Junction Temperature (
o
C)
V
C
V
GE
=4.0V
I
C
=120A
I
C
=50A
I
C
=100A
I
C
=130A
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
V
CE
, Collector-Emitter Voltage (V)
I
C
T
A
=150
o
C
5.0V
4.0V
3.3 V
2.0V
V
G
=1.0V
0
40
80
120
160
200
240
0
2
4
6
8
10
12
V
CE
, Collector-Emitter Voltage (V)
I
C
T
A
=25
o
C
5.0V
4.0V
3.3V
2.0V
V
G
=1.0V
0
2
4
6
8
10
0
1
2
3
4
5
6
V
GE
, Gate-Emitter Voltage(V)
V
C
I
C
=130A
120A
100A
50A
T
A
=25
o
C
0
40
80
120
160
200
240
0
1
2
3
4
5
6
V
GE
, Gate-Emitter Voltage (V)
I
C
,
V
CE
=6.0V
25
o
C
70
o
C
125
o
C
T
A
=150
o
C
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